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參數(shù)資料
| 型號： | APT50M85B2VR |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 56 A, 500 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TMAX-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 139K |
| 代理商： | APT50M85B2VR |
DYNAMIC CHARACTERISTICS
APT50M85B2VR_LVR
050-5913
Rev
A
5-2004
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.20
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMALCHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS = 0V, IS = -56A)
Reverse Recovery Time (I
S = -56A, dlS/dt = 100A/s)
Reverse Recovery Charge (I
S = -56A, dlS/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
56
224
1.3
680
17
8
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/dt
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.91mH, RG = 25, Peak IL = 56A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤ -ID56A
di/dt ≤ 700A/s V
R ≤ 500V
T
J ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 250V
I
D = 56A @ 25°C
V
GS = 15V
V
DD = 250V
I
D = 56A @ 25°C
R
G = 0.6
MIN
TYP
MAX
10500
1290
600
420
50
200
16
18
60
6
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z θ
JC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
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相關(guān)代理商/技術(shù)參數(shù) |
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| APT50M85B2VR_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V MOSFET |
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| APT50M85JVFR | 功能描述:MOSFET N-CH 500V 50A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT50M85JVR | 功能描述:MOSFET N-CH 500V 50A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT50M85LVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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