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參數(shù)資料
| 型號： | APT50M60JVFR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS V FREDFET |
| 中文描述： | 功率MOS V FREDFET |
| 文件頁數(shù)： | 5/5頁 |
| 文件大?。?/td> | 176K |
| 代理商： | APT50M60JVFR |
0
Typical Performance Curves
APT50M60JVFR
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
Switching Energy
Drain Current
Drain Voltage
Gate Voltage
T
J
125°C
10%
0
t
d(off)
90%
t
f
90%
Drain Current
Drain Voltage
Gate Voltage
T
J
125°C
10%
t
d(on)
90%
5%
t
r
5%
10%
Switching Energy
I
C
D.U.T.
APT60DF60
V
CE
Figure 20, Inductive Switching Test Circuit
V
DD
G
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP
) Package Outline
31.5 (1.240)
7.8 (.307)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
38.0 (1.496)
14.9 (.587)
11.8 (.463)
8.9 (.350)
Hex Nut M4
0.75 (.030)
12.6 (.496)
25.2 (0.992)
1.95 (.077)
* Source
Drain
Gate
*
r = 4.0 (.157)
4.0 (.157)
H=4.8 (.187)
H=4.9 (.193)
3.3 (.129)
* Source
Source terminals are shorted
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT50M60JVR | 功能描述:MOSFET N-CH 500V 63A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT50M60L2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M60L2VFR_04 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS V㈢ FREDFET |
| APT50M60L2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube |
| APT50M60L2VR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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