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參數(shù)資料
| 型號： | APT50M60JVFR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS V FREDFET |
| 中文描述： | 功率MOS V FREDFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 176K |
| 代理商： | APT50M60JVFR |
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Turn-off Switching Energy
APT50M60JVFR
MAX
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
SINGLE PULSE
Z
θ
J
,
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.05
0.3
0.7
0.9
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Symbol
I
S
I
SM
V
SD
dv
/
dt
THERMAL CHARACTERISTICS
Symbol
Characteristic
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -63A)
Peak Diode Recovery
dv
/
dt 5
Reverse Recovery Time
(I
S
= -63A,
di
/
dt
= 100A/μs)
Reverse Recovery Charge
(I
S
= -63A,
di
/
dt
= 100A/μs)
Peak Recovery Current
(I
S
= -63A,
di
/
dt
= 100A/μs)
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
MIN
TYP
MAX
63
252
1.3
15
300
600
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
2.6
10
17
34
R
θ
JC
R
θ
JA
MIN
TYP
MAX
0.22
40
UNIT
°C/W
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
6
Turn-off Switching Energy
Turn-on Switching Energy
6
Test Conditions
V
GS
= 0V
V
DS
= 25V
f
= 1 MHz
V
GS
= 10V
V
DD
= 250V
I
D
= 63A
@ 25°C
RESISTIVE SWITCHING
V
GS
=
15V
V
DD
=
250V
I
D
=
63A
@ 25°C
R
G
=
0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
=
333V, V
GS
= 15V
I
D
=
63A, R
G
=
5
INDUCTIVE SWITCHING @ 125°C
V
DD
=
333V, V
GS
= 15V
I
D
=
63A, R
G
=
5
MIN
TYP
10600
1800
795
560
70
285
20
25
80
10
1235
2820
1700
2900
UNIT
pF
nC
ns
μ
J
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
4 Starting T
j
=
+25°C, L = 1.61mH, R
G
=
25
, Peak I
L
= 63A
5
dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
≤
-
I
D
63A
di
/
dt
≤
700A/μs
V
R
≤
500V
T
J
≤
150
°
C
6 Eon includes diode reverse recovery. See figures 18, 20.
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相關(guān)代理商/技術(shù)參數(shù) |
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| APT50M60JVR | 功能描述:MOSFET N-CH 500V 63A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS V® 標(biāo)準(zhǔn)包裝:10 系列:* |
| APT50M60L2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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