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參數資料
| 型號： | APT50M60JN |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | N溝道增強型高壓功率MOSFET |
| 文件頁數： | 4/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | APT50M60JN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
V
G
,
I
D
,
I
D
,
C
500
100
50
10
5
1
.5
.1
20
16
12
8
4
0
50,000
10,000
5,000
1,000
500
400
100
50
10
5
1
1
5
10
50 100
500
.1
.5
1
5
10
50
0
200
400
600
800
1000
0
0.4
0.8
1.2
1.6
2.0
APT50M60JN
TC =+25
°
C
TJ =+150
°
C
SINGLE PULSE
I
D
= I
D
[Cont.]
VDS=400V
VDS=250V
VDS=100V
Crss
Coss
Ciss
TJ =+150
°
C
TJ =+25
°
C
TJ =-55
°
C
OPERATION HERE
LIMITED BY R
DS
(ON)
10
μ
S
100
μ
S
1mS
10mS
100mS
DC
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
Dimensions in Millimeters and (Inches)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source
Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
SOT-227 (ISOTOP
) Package Outline
ISOTOP
is a Registered Trademark of SGS Thomson.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
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相關代理商/技術參數 |
參數描述 |
|---|---|
| APT50M60JNF | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 71A I(D) |
| APT50M60JVFR | 功能描述:MOSFET N-CH 500V 63A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT50M60JVR | 功能描述:MOSFET N-CH 500V 63A SOT-227 RoHS:是 類別:半導體模塊 >> FET 系列:POWER MOS V® 標準包裝:10 系列:* |
| APT50M60L2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT50M60L2VFR_04 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS V㈢ FREDFET |
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