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參數(shù)資料
| 型號(hào)： | APT50M60JN |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | N溝道增強(qiáng)型高壓功率MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 60K |
| 代理商： | APT50M60JN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
(
R
D
(
I
D
,
(
V
0
50
100
150
200
250
0
4
8
12
16
20
0
2
4
6
8
10
0
50
100
150
200
250
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
75
100 125 150
-50
-25
0
25
50
75
100 125
150
APT50M60JN
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
200
160
120
80
80
0
100
80
60
40
20
0
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
200
160
120
80
40
0
2.0
1.5
1.0
0.5
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
TJ = 25
°
C
250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
VGS=10V
VGS=20V
VGS=15V
VGS=8, 10 & 15V
5V
6V
4V
5.5V
4.5V
5V
6V
4V
4.5V
5.5V
10V
8V
TJ = +125
°
C
VD250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +25
°
C
TJ = -55
°
C
TJ = +125
°
C
TJ = +25
°
C
TJ = -55
°
C
0
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