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參數(shù)資料
| 型號： | APT50GT60S |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 409K |
| 代理商： | APT50GT60S |
052-6273
Rev
B
11-2005
APT50GT60B_SR(G)
Figure 22, Turn-on Switching Waveforms and Denitions
Figure 23, Turn-off Switching Waveforms and Denitions
T
J = 125°C
Collector Current
Collector Voltage
Gate Voltage
Switching Energy
5%
10%
t
d(on)
90%
10%
t
r
5%
T
J = 125°C
Collector Voltage
Collector Current
Gate Voltage
Switching Energy
0
90%
t
d(off)
10%
t
f
90%
APT40DQ60
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
IC
A
D.U.T.
VCE
Figure 21, Inductive Switching Test Circuit
VCC
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
C
ol
le
ct
or
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018) {3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
C
ol
le
ct
or
(Heat
Sink)
1.98 (.078)
2.08 (.082)
Gate
Collector
Emitter
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
D
3PAKPackageOutline
e1 SAC: Tin, Silver, Copper
e3 SAC: Tin, Silver, Copper
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50GT60SG | 110 A, 600 V, N-CHANNEL IGBT |
| APT50GT60BRDL | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60BR | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60BRG | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60SRG | 110 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GT60SR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60SRG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50M38JFLL | 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT50M38JFLL_04 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS 7 R FREDFET |
| APT50M38JLL | 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
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