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參數(shù)資料
| 型號： | APT50GT60S |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 110 A, 600 V, N-CHANNEL IGBT |
| 封裝： | D3PAK-3 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 409K |
| 代理商： | APT50GT60S |
052-6273
Rev
B
11-2005
APT50GT60B_SR(G)
TYPICAL PERFORMANCE CURVES
0.30
0.25
0.20
0.15
0.10
0.05
0
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10-5
10-4
10-3
10-2
10-1
1.0
4,000
1,000
500
100
160
140
120
100
80
60
40
20
0
C,
CAPACITANCE
(
P
F)
I C
,COLLECTOR
CURRENT
(A)
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
V
CE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
Figure 18,Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200 300
400 500
600
700
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 50 60 70 80 90 100
F
MAX
,OPERATING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
120
50
10
2
0.5
0.1
0.05
F
max
= min (f
max, fmax2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - Pcond
E
on2 + Eoff
f
max2 =
P
diss =
T
J - TC
RθJC
C
oes
C
res
C
ies
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
P
DM
Note:
0.114
0.113
0.0057
0.0276
Power
(watts)
RC MODEL
Junction
temp. (°C)
Case temperature. (°C)
TJ = 125°C
TC = 75°C
D = 50 %
VCE = 400V
RG = 4.3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50GT60SG | 110 A, 600 V, N-CHANNEL IGBT |
| APT50GT60BRDL | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60BR | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60BRG | 110 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GT60SRG | 110 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GT60SR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50GT60SRG | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Thunderbolt IGBT |
| APT50M38JFLL | 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
| APT50M38JFLL_04 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:POWER MOS 7 R FREDFET |
| APT50M38JLL | 功能描述:MOSFET N-CH 500V 88A SOT-227 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:POWER MOS 7® 標準包裝:10 系列:* |
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