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參數(shù)資料
| 型號： | APT50GP60S |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 108K |
| 代理商： | APT50GP60S |
0
APT50GP60B_S
TYPICAL PERFORMANCE CURVES
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 23, Turn-off Switching Waveforms and Definitions
*DRIVER SAME TYPE AS D.U.T.
I
C
V
CLAMP
100uH
V
TEST
A
A
B
D.U.T.
DRIVER*
V
CE
Figure 24, E
ON1
Test Circuit
90%
Gate Voltage
Collector Voltage
Collector Current
0
t
f
90%
10%
t
d(off)
Switching Energy
T
T
J
= 125 C
Collector Current
Collector Voltage
Switching Energy
5 %
10%
Gate Voltage
10%
t
d(on)
5%
t
r
90%
T
J
= 125 C
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
I
C
A
D.U.T.
APT30DF60
V
CE
Figure 21, Inductive Switching Test Circuit
V
CC
15.95 (.628)
1.22 (.048)
5.45 (.215) BSC
4.98 (.196)
1.47 (.058)
2.67 (.105)
0.46 (.018)
0.020 (.001)
Dimensions in Millimeters (Inches)
Heat Sink (Collector)
and Leads are Plated
3.81 (.150)
C
(
1.98 (.078)
Gate
CoEmitter
1.27 (.050)
11.51 (.453)
13.41 (.528)
Revised
1.04 (.041)
13.79 (.543)
4/18/95
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
3.50 (.138)
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
C
Collector
Emitter
Gate
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
TO
-
247 Package Outline
D
3
PAK Package Outline
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50GT120JRDQ2 | Thunderbolt IGBT |
| APT50GT120JU3 | ISOTOP Buck chopper Trench IGBT |
| APT50GT60BRDQ1 | Thunderbolt IGBT |
| APT50GT60BRDQ1G | Thunderbolt IGBT |
| APT50GT60BRDQ2 | Thunderbolt IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120JD30 | 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120L | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GS60BR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
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