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參數(shù)資料
| 型號： | APT50GP60S |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | POWER MOS 7 IGBT |
| 中文描述： | IGBT的功率MOS 7 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 108K |
| 代理商： | APT50GP60S |
0
APT50GP60B_S
TYPICAL PERFORMANCE CURVES
10,000
10 20
30
40
50
60
70
80
90
100
210
100
50
10
0.20
0.16
0.12
0.08
0.04
0
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
Z
θ
J
,
0.3
0.9
0.7
0.1
0.05
0.5
SINGLE PULSE
10
-4
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
-5
10
-3
10
-2
10
-1
1.0
5,000
1,000
500
100
50
10
200
180
160
140
120
100
180
160
140
120
0
C
P
F
I
C
,
F
M
,
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
V
, COLLECTOR TO EMITTER VOLTAGE
Figure 18, Minimim Switching Safe Operating Area
0
10
20
30
40
50
0
100
200
300
400
500
600
700
I
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current
T
J
= 125
°
C
T
= 75
°
C
D = 50 %
V
CE
= 400V
R
G
= 5
Cies
Coes
max
F
max1
max2
max1
d(on)
P
E
T
R
θ
r
d(off )
f
diss
cond
P
E
+
max2
on2
off
J
C
diss
JC
min(f
,f
0.05
+
)
f
t
t
t
t
f
T
P
=
=
+
+
=
=
Cres
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
0.0090806
0.0192963
0.0658343
0.0046253
0.0021766
0.0142175
Power
(Watts)
Junction
temp. ( ”C)
Case temperature
RC MODEL
0.1055619
0.345873
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GP60SG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - PT POWER MOS 7 - SINGLE - Rail/Tube |
| APT50GR120B2 | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO247 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120JD30 | 制造商:Microsemi Corporation 功能描述:Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GR120L | 制造商:Microsemi Corporation 功能描述:IGBT 1200V 117A 694W TO264 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT50GS60BR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Thunderbolt High Speed NPT IGBT |
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