參數(shù)資料
型號(hào): APT50GF60LRD
元件分類: IGBT 晶體管
英文描述: 80 A, 600 V, N-CHANNEL IGBT, TO-264AA
封裝: TO-264, 3 PIN
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 112K
代理商: APT50GF60LRD
052-6253
Rev
B
6-2002
APT50GF60B2RD/LRD
C,
CAPACITANCE
(pF)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
V
GE
,GATE-TO-EMITTER
VOLTAGE
(VOLTS)
I C
,COLLECTOR
CURRENT
(AMPERES)
I C
,COLLECTOR
CURRENT
(AMPERES)
TC =+25°C
TJ =+150°C
SINGLE PULSE
250Sec. Pulse Test
VGE = 15V
f = 1MHz
9V
7V
Cies
Cres
11V
8V
11V
10V
9V
8V
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
TC=+25°C
TC=+150°C
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
0.01
D=0.5
0.2
0.1
0.05
0.02
VGE=13, 15 & 17V
10V
TC=-55°C
Coes
SINGLE PULSE
0
4
8
12
16
20
0
4
8
12
16
20
0
1
2
3
4
5
1
10
100
600
0.01
0.1
1.0
10
50
0
40
80
120
160
200
10-5
10-4
10-3
10-2
10-1
1.0
10
100
80
60
40
20
0
100
80
60
40
20
0
10,000
1,000
100
VCE=480V
VCE=300V
VCE=120V
IC = IC2
TJ = +25°C
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C)
Figure 2, Typical Output Characteristics (TJ = 150°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
Figure 4, Maximum Safe Operating Area
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
100s
1ms
10ms
100
80
60
40
20
0
150
100
10
1
20
16
12
8
4
0
OPERATION
HERE
LIMITED
BY
VCE (SAT)
.45
0.1
0.05
0.01
0.005
0.001
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