參數(shù)資料
型號： APT50GF60B2RD
廠商： Advanced Power Technology Ltd.
英文描述： The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
中文描述： ⑩的快速IGBT是一種高壓IGBT的新一代。
文件頁數(shù)： 6/7頁
文件大?。?/td> 112K
代理商： APT50GF60B2RD
PRELMNARY
Z
Θ
J
,
t
r
,
I
R
,
I
F
,
(
°
C
(
(
(
t
f
,
K
f
,
Q
r
,
(
(
(
V
f
,
(
V
F
, ANODE-TO-CATHODE VOLTAGE (VOLTS)
Figure 1, Forward Voltage Drop vs Forward Current
50
di
F
/dt, CURRENT SLEW RATE (AMPERES/
μ
SEC)
Figure 2, Reverse Recovery Charge vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/
μ
SEC)
Figure 3, Reverse Recovery Current vs Current Slew Rate
200
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 4, Dynamic Parameters vs Junction Temperature
di
F
/dt, CURRENT SLEW RATE (AMPERES/
μ
SEC)
Figure 5, Reverse Recovery Time vs Current Slew Rate
di
F
/dt, CURRENT SLEW RATE (AMPERES/
μ
SEC)
Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
APT50GF60B2RD/LRD
0
0
0.5
1.0
1.5
2.0
2.5
10
50
100
500
1000
0
200
400
75
100 125
150
0
200
400
600
800
1000
0
200
400
600
800
1000
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
T
J
= 100
°
C
V
R
= 350V
T
J
=100
°
C
V
R
=350V
T
J
=100
°
C
V
R
=350V
T
J
= 100
°
C
V
R
= 350V
I
F
=60A
T
J
= 150
°
C
T
J
= -55
°
C
T
J
= 100
°
C
120A
30A
V
fr
T
fr
t
rr
Q
rr
Q
rr
t
rr
200
160
120
80
40
0
40
30
20
10
0
160
120
80
40
0
0.7
0.5
0.1
0.05
0.01
0.005
0.001
2500
2000
1500
1000
500
0
2.0
1.6
1.2
0.8
0.4
0.0
1200
1000
800
600
400
200
0
120A
60A
30A
120A
I
RRM
60A
15.0
12.5
10.0
7.5
5.0
2.5
0
T
J
= 25
°
C
60A
30A
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關(guān)PDF資料
PDF描述
APT50GF60BR Thin Film RF/Microwave Capacitor; Capacitance:3.3pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
APT50GF60HR The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60LRD Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance:+/- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C
APT6015JVFR POWER MOS V FREDFET
APT6020B2VFR POWER MOS V FREDFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT50GF60BR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60HR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs.
APT50GF60JCU2 制造商:Microsemi Corporation 功能描述:Microsemi APT50GF60JCU2 IGBTs
APT50GF60JU2 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APT50GF60JU3 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
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