- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51266 > APT50GF120JRD (MICROSEMI POWER PRODUCTS GROUP) 75 A, 1200 V, N-CHANNEL IGBT PDF資料下載
參數(shù)資料
| 型號： | APT50GF120JRD |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 75 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 114K |
| 代理商： | APT50GF120JRD |
APT50GF120JRD
052-6257
Rev
B
7-2002
VCC = 0.66 VCES
VGE= +15V
TJ = +25°C
IC = IC2
VCC = 0.66 VCES
VGE= +15V
TJ = +125°C
RG = 10
VCC = 0.66 VCES
VGE= +15V
RG = 10
IC1
0.5 IC2
IC2
IC1
Eon
Eoff
Eon
Eoff
0.5 IC2
IC2
-50 -25
0
25
50
75
100 125 150
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
0
20
40
60
80
100
-50 -25
0
25
50
75
100 125 150
0
10
20
30
40
50
0.1
1.0
10
100
1000
80
60
40
20
0
40
30
20
10
0
8
6
4
2
0
ForBoth:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gatedriveasspecified
Powerdissapation=110W
ILOAD=IRMS offundamental
5.0
4.0
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
50
1
0.1
50
10
1
.1
I C
,COLLECTOR
CURRENT
(AMPERES)
TOTAL
SWITCHING
ENERGY
LOSSES
(mJ)
B
V
CES
,COLLECTOR-TO-EMITTER
BREAKDOWN
V
CE
(SAT),
COLLECTOR-TO-EMITTER
VOLTAGE
(NORMALIZED)
SATURATION
VOLTAGE
(VOLTS)
SWITCHING
ENERGY
LOSSES
(mJ)
SWITCHING
ENERGY
LOSSES
(mJ)
I C
,COLLECTOR
CURRENT
(AMPERES)
TJ, JUNCTION TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature
Figure 9, Maximum Collector Current vs Case Temperature
TJ,JUNCTIONTEMPERATURE(°C)
RG, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature
Figure 11, Typical Switching Energy Losses vs Gate Resistance
TJ,JUNCTIONTEMPERATURE(°C)
IC,COLLECTORCURRENT(AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (kHz)
Figure 14,Typical Load Current vs Frequency
Graph not Applicable
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT50GF60B2RD | 80 A, 600 V, N-CHANNEL IGBT |
| APT50GF60LRD | 80 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| APT50GN60B | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GN60B | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT50GN60BG | 107 A, 600 V, N-CHANNEL IGBT, TO-247AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT50GF120JRDQ3 | 功能描述:IGBT 1200V 120A 521W SOT227 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APT50GF120LR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT50GF120LRG | 功能描述:IGBT 1200V 135A 781W TO264 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT50GF60B2RD | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT50GF60BR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs. |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。