參數(shù)資料
型號: APT5040CNR
廠商: Advanced Power Technology Ltd.
英文描述: N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述: ? -通道增強(qiáng)型高壓功率MOSFET
文件頁數(shù): 2/4頁
文件大?。?/td> 52K
代理商: APT5040CNR
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Test Conditions
f = 1 MHz
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 1.80
Characteristic
Drain-to-Case Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
DC
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
DYNAMIC CHARACTERISTICS
APT5040CNR
MIN
TYP
MAX
15
22
1430
1800
330
465
130
200
71
105
8.7
12
37
55
14
28
21
42
44
66
15
30
UNIT
pF
nC
ns
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
3
Starting T
j
=
+25
°
C, L = 9.47mH, R
G
=
25
, Peak I
L
= 13A
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Symbol
R
θ
JC
R
θ
JA
Characteristic
Junction to Case
Junction to Ambient
UNIT
Amps
Volts
ns
μ
C
MIN
TYP
MAX
13
52
1.3
296
592
4.4
8.8
UNIT
W/
°
C
MIN
TYP
MAX
0.80
50
THERMAL CHARACTERISTICS
0
Z
θ
J
,
°
C
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
相關(guān)PDF資料
PDF描述
APT5040KFLL POWER MOS 7 FREDFET
APT50GF120JRDQ3 FAST IGBT & FRED
APT50GF60JU3 ISOTOP Buck chopper NPT IGBT
APT50GN120B2 IGBT
APT50GN120B2G IGBT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT5040DN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | CHIP
APT5040KFLL 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET
APT5040KFLLG 功能描述:MOSFET N-CH 500V 17A TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
APT5050AN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-3
APT5050BN 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247AD