參數(shù)資料
型號(hào)： APT33GF120B2RD
元件分類： IGBT 晶體管
英文描述： 52 A, 1200 V, N-CHANNEL IGBT
封裝： TMAX-3
文件頁數(shù)： 2/8頁
文件大?。?/td> 113K
代理商： APT33GF120B2RD
APT33GF120B2RD/LRD
052-6254
Rev
C
3-2003
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS (IGBT)
UNIT
°C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.42
0.90
40
0.22
6.1
10
1.1
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
RΘJC
RΘJA
WT
Torque
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.8VCES
IC = IC2
RG =10
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10
TJ = +25°C
VCE = 20V, IC = 25A
MIN
TYP
MAX
1855
230
110
170
19
100
24
85
170
125
25
60
210
74
2.8
5.6
27
65
190
70
5.2
8.5
20
UNIT
pF
nC
ns
mJ
ns
mJ
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 4
Turn-off Switching Energy
Total Switching Losses 4
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses 4
Forward Transconductance
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
Leakages include the FRED and IGBT.
3
See MIL-STD-750 Method 3471
4
Switching losses include the FRED and IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料
PDF描述
APT33GF120LRD 52 A, 1200 V, N-CHANNEL IGBT, TO-264AA
APT4020SVFR 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
APT4020BVFR 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
APT4020SVFRG 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
APT4025BN 23 A, 400 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APT33GF120B2RDQ2 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:FAST IGBT & FRED
APT33GF120B2RDQ2G 功能描述:IGBT 1200V 64A 357W TMAX RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT33GF120BR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1200V VF/Vce(ON):3.2V ID(cont):33Amps|Fast IGBT Family
APT33GF120BRG 功能描述:IGBT 1200V 52A 297W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
APT33GF120HR 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Fast IGBT is a new generation of high voltage power IGBTs
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