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參數(shù)資料
| 型號(hào)： | APT20GF120KR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | The Fast IGBT is a new generation of high voltage power IGBTs. |
| 中文描述： | 該快速IGBT是一種高壓IGBT的新一代。 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大小： | 74K |
| 代理商： | APT20GF120KR |
0
APT20GF120BR
C
I
C
,
I
C
,
V
G
,
I
C
,
I
C
,
T
C
=+25°C
T
=+150°C
SINGLE PULSE
250μSec. Pulse Test
V
GE
= 15V
I
C
= I
T
J
= +25°C
f = 1MHz
9V
11V
9V
C
ies
C
res
13V
7V
13V
11V
7V
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.05
D=0.5
0.2
0.02
0.01
SINGLE PULSE
C
oes
V
GE
=17 & 15V
Z
J
,
°
C
V
GE
=17 & 15V
T
C
=-55
°
C
T
C
=+25
°
C
T
C
=+150
°
C
0.1
OPERATION
LIMITED
BY
V
CE
(SAT)
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25
°
C)
60
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T
J
= 150
°
C)
100
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V
GE
= 15V
2,000
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
20
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
Q
, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
100μS
1mS
10mS
50
40
30
20
10
0
50
10
5
1
16
12
8
4
0
50
40
30
20
10
0
40
30
20
10
0
1,000
500
100
50
10
1.0
0.5
0.1
0.05
0.01
0.005
0.001
V
CE
=240V
V
CE
=600V
0
4
8
12
16
20
0
4
8
12
16
20
0
2
4
6
8
1
5
10
50 100
1200
0.01
0.1
1.0
10
50
0
40
80
120
160
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
10
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|---|---|
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