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參數(shù)資料
| 型號(hào)： | APT20GF120KR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | The Fast IGBT is a new generation of high voltage power IGBTs. |
| 中文描述： | 該快速IGBT是一種高壓IGBT的新一代。 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | APT20GF120KR |
0
APT20GF120BR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25
°
C)
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
R
G
= 10
Inductive Switching (150
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +150°C
Inductive Switching (25
°
C)
V
CLAMP
(Peak)
= 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
MIN
TYP
MAX
1050
1210
100
150
63
110
95
140
13
20
62
90
15
30
67
130
92
140
93
190
17
34
30
60
105
160
71
140
1.3
3.0
1.5
3.0
2.7
5.0
17
30
35
70
93
140
70
140
2.4
5.0
12
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
UNIT
°C/W
oz
gm
lbin
Nm
MIN
TYP
MAX
0.63
40
0.22
6.1
10
1.1
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw
)
Symbol
R
JC
R
JA
W
T
Torque
THERMAL AND MECHANICAL CHARACTERISTICS
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
I
C
= I
C2
,
R
GE
= 25 ,
L = 110μH, T
j
= 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
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