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參數(shù)資料
| 型號： | APT130N65JC6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 130 A, 650 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 153K |
| 代理商： | APT130N65JC6 |
050-7213
Rev
A
3-201
1
Typical Performance Curves
APT130N65JC6
6000
10000
14000
18000
22000
26000
30000
34000
0
10
20
30
40
50
0
60
90
120
150
180
20
50
80
110
140
170
200
1
10
100
400
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
200
400
600
800
1000
1200
20
50
80
110
140
170
200
0
2
4
6
8
10
12
14
16
0
100
200 300
400 500 600
700
800
100
1000
10,000
10,0000
0
10
20
30
40
50
C
iss
T
J = =25°C
V
DS=520V
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Capacitance vs Drain-To-Source Voltage
C,
CAP
ACIT
ANCE
(pF)
V
DS= 325V
Q
g, TOTAL GATE CHARGE (nC)
FIGURE 11, Gate Charges vs Gate-To-Source Voltage
V
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
I
D (A)
FIGURE 13, Delay Times vs Current
t d(on)
and
t
d(of
f)
(ns)
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 12, Source-Drain Diode Forward Voltage
I DR
,REVERSE
DRAIN
CURRENT
(A)
I
D (A)
FIGURE 14 , Rise and Fall Times vs Current
t r,
and
t
f
(ns)
R
G, GATE RESISTANCE (Ohms)
FIGURE 16, Switching Energy vs Gate Resistance
SWITCHING
ENERGY
(uJ)
0
2000
4000
6000
8000
10000
12000
14000
16000
20
50
80
110
140
170
200
I
D (A)
FIGURE 15, Switching Energy vs Current
SWITCHING
ENERGY
(
μ
J)
C
oss
C
rss
T
J= +150°C
I
D = 130A
V
DD = 433V
R
G = 2.2 Ω
T
J = 125°C
L = 100μH
t
d(on)
t
d(off)
V
DD = 433V
R
G = 2.2Ω
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
E
on
E
off
V
DD = 433V
R
G = 2.2Ω
T
J = 125°C
L = 100μH
t
r
t
f
E
on
E
off
V
DD = 400V
I
D = 130A
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
V
DS= 130V
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