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參數(shù)資料
| 型號： | APT130N65JC6 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 130 A, 650 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOTOP-4 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 153K |
| 代理商： | APT130N65JC6 |
050-7213
Rev
A
3-201
1
DYNAMIC CHARACTERISTICS
APT130N65JC6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Continuous current limited by package lead temperature.
2 Repetitive Rating: Pulse width limited by maximum junction temperature
3 Repetitive avalanche causes additional power losses that can be calculated as
PAV = EAR*f . Pulse width tp limited by Tj max.
Microsemi reserves the right to change, without notice, the specications and information contained herein.
4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery.
7 Maximum 125°C diode commutation speed = di/dt 300A/μs
0
0.04
0.08
0.12
0.16
0.20
10-5
10-4
10-3
10-2
0.1
1
10
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak T J = P DM x Z θJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note :
Symbol Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
C
iss
Input Capacitance
V
GS = 0V
V
DS = 25V
f = 1 MHz
8718
pF
C
oss
Output Capacitance
1180
C
rss
Reverse Transfer Capacitance
550
Q
g
Total Gate Charge 5
V
GS = 10V
V
DD = 325V
I
D = 130A @ 25°C
634
nC
Q
gs
Gate-Source Charge
56
Q
gd
Gate-Drain ("Miller") Charge
410
t
d(on)
Turn-on Delay Time
INDUCTIVE SWITCHING
V
GS = 15V
V
DD = 433V
I
D = 130A @ 25°C
R
G = 2.2Ω
46
ns
t
r
Rise Time
74
t
d(off)
Turn-off Delay Time
940
t
f
Fall Time
80
E
on
Turn-on Switching Energy 6
INDUCTIVE SWITCHING @ 25°C
V
DD = 433V, VGS = 15V
I
D = 130A, RG = 2.2Ω
6093
μJ
E
off
Turn-off Switching Energy
7126
E
on
Turn-on Switching Energy 6
INDUCTIVE SWITCHING @ 125°C
V
DD = 433V, VGS = 15V
I
D =130A, RG = 2.2Ω
7217
E
off
Turn-off Switching Energy
8188
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
I
S
Continuous Source Current (Body Diode)
130
Amps
I
SM
Pulsed Source Current 2 (Body Diode)
390
V
SD
Diode Forward Voltage 4 (V
GS = 0V, IS = -130A)
1.2
Volts
dv
/
dt
Peak Diode Recovery dv/
dt
7
15
V/ns
t
rr
Reverse Recovery Time
(I
S = -130A,
di
/
dt = 100A/μs)
T
j = 25°C
1133
ns
Q
rr
Reverse Recovery Charge
(I
S = -130A,
di
/
dt = 100A/μs)
T
j = 25°C
52
μC
I
RRM
Peak Recovery Current
(I
S = -130A,
di
/
dt = 100A/μs)
T
j = 25°C
83
Amps
Symbol
Characteristic
MIN
TYP
MAX
UNIT
R
θJC
Junction to Case
0.16
°C/W
R
θJA
Junction to Ambient
40
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