- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄57945 > APT12GT60BR 25 A, 600 V, N-CHANNEL IGBT, TO-247AD PDF資料下載
參數(shù)資料
| 型號： | APT12GT60BR |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 25 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 393K |
| 代理商： | APT12GT60BR |
052-6208
Rev
E
12-2005
APT12GT60BR(G)
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 10
L = 100H
SWITCHING
ENERGY
LOSSES
(J)
E
ON2
,TURN
ON
ENERGY
LOSS
(J)
t r,
RISE
TIME
(ns)
t d(ON)
,TURN-ON
DELAY
TIME
(ns)
SWITCHING
ENERGY
LOSSES
(J)
E
OFF
,TURN
OFF
ENERGY
LOSS
(J)
t f,
FALL
TIME
(ns)
t d
(OFF)
,TURN-OFF
DELAY
TIME
(ns)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
I
CE, COLLECTOR TO EMITTER CURRENT (A)
I
CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 14, Turn Off Energy Loss vs Collector Current
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 16, Switching Energy Losses vs Junction Temperature
R
G = 10, L = 100H, VCE = 400V
V
CE = 400V
T
J = 25°C, or 125°C
R
G = 10
L = 100H
8
6
4
2
0
12
10
8
6
4
2
0
600
500
400
300
200
100
0
1000
800
600
400
200
0
140
120
100
80
60
40
20
0
60
50
40
30
20
10
0
400
300
200
100
0
600
500
400
300
200
100
0
V
GE = 15V
T
J = 125°C, VGE = 15V
T
J = 25 or 125°C,VGE = 15V
T
J = 25°C, VGE = 15V
VCE = 400V
VGE = +15V
RG = 10
0
5
10
15
20
25
0
5
10
15
20
25
0
5
10
15
20
25
0
5
10
15
20
25
0
5
10
15
20
25
0
5
10
15
20
25
0
10
20
30
40
50
0
25
50
75
100
125
R
G = 10, L = 100H, VCE = 400V
VCE = 400V
VGE = +15V
RG = 10
T
J = 125°C
T
J = 25°C
VCE = 400V
VGE = +15V
RG = 10
T
J = 125°C
T
J = 25°C
E
on2,20A
E
off,20A
VCE = 400V
VGE = +15V
TJ = 125°C
E
on2,10A
E
off,10A
E
on2,5A
E
off,5A
E
on2,20A
E
off,20A
E
on2,10A
E
off,10A
E
on2,5A
E
off,5A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT12GT60BRG | 25 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT12GT60BR | 25 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| APT13GP120BSC | 41 A, 1200 V, N-CHANNEL IGBT, TO-247AD |
| APT14050JVFR | 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT14050JVFR | 23 A, 1400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT12GT60BRG | 功能描述:IGBT 600V 25A 108W TO247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:Thunderbolt IGBT® 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| APT12GT60KR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT12GT60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SING - Rail/Tube |
| APT12M80B | 功能描述:MOSFET N-CH 800V 13A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT12M80S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。