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參數(shù)資料
| 型號： | APT1201R4BLL |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| 中文描述： | 電源MOS 7TM是一個低損耗，高電壓，N溝道增強型功率MOSFET的新一代。 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 69K |
| 代理商： | APT1201R4BLL |
DYNAMIC CHARACTERISTICS
APT1201R4 BLL - SLL
0
15.49 (.610)
5.38 (.212)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.80 (.819)
1.65 (.065)
1.01 (.040)
3.50 (.138)
2.87 (.113)
4.69 (.185)
1.49 (.059)
2.21 (.087)
0.40 (.016)
D
Drain
Source
Gate
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
TO
-
247 Package Outline
15.95 (.628)
1.22 (.048)
5.45 (.215) BSC
4.98 (.196)
1.47 (.058)
2.67 (.105)
{3 Plcs}
0.46 (.018)
0.020 (.001)
Dimensions in Millimeters (Inches)
Heat Sink (Drain)
3.81 (.150)
D
(
1.98 (.078)
Gate
Drain
Source
1.27 (.050)
11.51 (.453)
13.41 (.528)
Revised
1.04 (.041)
13.79 (.543)
4/18/95
D
3
PAK Package Outline
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/μs)
Peak Diode Recovery
dv
/
dt 5
INFORMATION
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
GS
= 10V
DD
= 0.5 V
DSS
= I
D[Cont.]
@ 25°C
GS
= 15V
DD
= 0.5 V
DSS
= I
D[Cont.]
@ 25°C
R
G
= 1.6
W
MIN
TYP
MAX
2300
320
241
81
10
48
14
9
44
23
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT
Amps
Volts
ns
μC
V/ns
MIN
TYP
MAX
9
36
1.3
500
7.0
10
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
2
Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
4
Starting T
j
=
+25°C, L = 29.9mH, R
G
=
25
W
, Peak I
L
= 9A
5 dv
/
dt
numbers reflect the limitations of the test circuit rather than the
device itself.
I
S
￡
-
I
D
[
Cont.
]
di
/
dt
￡
700A/μs
V
R
￡
V
DSS
T
J
￡
150
°
C
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
Symbol
R
q
JC
R
q
JA
MIN
TYP
MAX
0.42
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv
/
dt
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1201R4SFLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS 7 FREDFET |
| APT1201R4SFLLG | 功能描述:MOSFET N-CH 1200V 9A D3PAK RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS 7® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| APT1201R4SLL | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
| APT1201R5BVFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:POWER MOS V |
| APT1201R5BVFRG | 功能描述:MOSFET N-CH 1200V 10A TO-247 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:POWER MOS V® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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