型號(hào): | APT12GT60KR |
廠商: | Advanced Power Technology Ltd. |
英文描述: | The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. |
中文描述: | ⑩的迅雷是IGBT的高壓電源IGBT的新一代。 |
文件頁數(shù): | 1/2頁 |
文件大小: | 24K |
代理商: | APT12GT60KR |
相關(guān)PDF資料 |
PDF描述 |
---|---|
APT20GF120BR | The Fast IGBT is a new generation of high voltage power IGBTs. |
APT20GF120BRD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
APT20GF120KR | The Fast IGBT is a new generation of high voltage power IGBTs. |
APT2X30D120J | CONNECTOR ACCESSORY |
APT2X31D120J | CONNECTOR ACCESSORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
---|---|
APT12GT60KRG | 制造商:Microsemi Corporation 功能描述:INSULATED GATE BIPOLAR TRANSISTOR - NPT MED FREQUENCY - SING - Rail/Tube |
APT12M80B | 功能描述:MOSFET N-CH 800V 13A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:POWER MOS 8™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
APT12M80S | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:N-Channel MOSFET |
APT13003D | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR |
APT13003DI-G1 | 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR |