- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369364 > APT1004R2KN (Advanced Power Technology Ltd.) Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32 PDF資料下載
參數(shù)資料
| 型號： | APT1004R2KN |
| 廠商： | Advanced Power Technology Ltd. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32 |
| 中文描述： | N溝道增強型高壓功率MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | APT1004R2KN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-25
0
25
50
-50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
(
R
D
(
I
D
,
(
V
0
-50 -25 0 25 50 75 100 125 150
1.4
1.2
1.0
0.8
0.6
0.4
APT1004R/1004R2BN
μ
SEC. PULSE TEST
VD230
5V
4.5V
GS
4V
10
00
2
4
6
8
2
4
8
6
2
3
5
1
0
4
TJ
°
C
TJ
°
C
J
°
C
TJ
°
C
J
°
C
TJ
°
C
75
100
125 150
25
50
75
100
125
150
0
0.0
2.5
2.0
1.5
1.0
0.5
200
300
400
500
100
0
APT1004R2BN
APT1004RRBN
1
2
3
4
5
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
2.5
5V
4.5V
GS
6V
5.5V
4V
GS
GS
2
4
6
8
10
12
0.7
0.9
0.8
1.0
1.1
1.2
5
0
1
3
4
2
-25
0
25
50
75
100
125 150
-50
0
4
8
12
16
20
2.0
1.5
1.0
0
0.5
0.0
T
= 25
°
C
2
μ
SEC. PULSE TEST
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT100GF60B2R | The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT100GF60JR | The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT100GF60JRD | The Fast IGBT⑩ is a new generation of high voltage power IGBTs. |
| APT100GF60LR | The Fast IGBT is a new generation of high voltage power IGBTs. |
| APT10M25SVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1004RAN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-3 |
| APT1004RBN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RBNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.4A I(D) | TO-247AD |
| APT1004RCN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RDN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。