- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369364 > APT1002RCN (Advanced Power Technology Ltd.) LJT 61C 61#20 SKT RECP PDF資料下載
參數(shù)資料
| 型號： | APT1002RCN |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | LJT 61C 61#20 SKT RECP |
| 中文描述： | ? -通道增強型高壓功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 50K |
| 代理商： | APT1002RCN |
MIN
TYP
MAX
240
240
28
26
APT1002RBN
APT1002R4BN
MIN
TYP
MAX
APT1002RBN
7.0
6.5
28
26
1.3
910
5
APT1002R4BN
APT1002RBN
APT1002R4BN
450
2.5
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 1.8
MIN
TYP
MAX
1530
230
80
66
6.5
36
14
13
55
19
1800
325
120
105
10
54
28
26
82
37
UNIT
pF
nC
ns
APT1002R/1002R4BN
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions / Part Number
Continuous Source Current
(Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
UNIT
Amps
Volts
ns
μ
C
Test Conditions / Part Number
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.], V
DS
= P
D
/ I
D
[Cont.], t = 1 Sec.
Symbol
SOA1
I
LM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
UNIT
Watts
Amps
SAFE OPERATING AREA CHARACTERISTICS
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
0.5
0.1
0.05
0.01
0.005
0.001
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D=0.5
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT10030L2VFR | LJT 61C 61#20 SKT WALL RECP |
| APT10030L2VR | LJT 19C 19#12 SKT WALL RECP |
| APT1004R2BN | Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32 |
| APT1004R2KN | Circular Connector; No. of Contacts:32; Series:; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:18; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:18-32 |
| APT100GF60B2R | The Fast IGBT is a new generation of high voltage power IGBTs. |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1002RDN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
| APT10030L2VFR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10030L2VFR_04 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT10030L2VFRG | 制造商:Microsemi Corporation 功能描述:POWER FREDFET - MOS5 - Rail/Tube 制造商:Microsemi Corporation 功能描述:POWER FREDFET TRANSISTOR |
| APT10030L2VR | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。