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參數(shù)資料
| 型號： | APT10030L2VR |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | LJT 19C 19#12 SKT WALL RECP |
| 中文描述： | 電源MOS V是一個高電壓N新一代通道增強型功率MOSFET。 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 79K |
| 代理商： | APT10030L2VR |
Single Pulse Avalanche Energy
4
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
UNIT
Volts
Amps
Ohms
μA
nA
Volts
MIN
TYP
MAX
1000
33
0.300
250
1000
±100
4
2
APT10030L2VFR
1000
33
132
±30
±40
830
6.67
-55 to 150
300
33
50
3200
APT10030L2VFR
1000V 33A 0.300
W
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250μA)
On State Drain Current
2
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
Drain-Source On-State Resistance
2
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 5mA)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
POWER MOS V
USA
EUROPE
405 S.W. Columbia Street
Bend, Oregon 97702-1035
Phone: (541) 382-8028
FAX: (541) 388-0364
Chemin de Magret
F-33700 Merignac - France
Phone: (33)5 5792 1515
FAX: (33)5 56 4797 61
G
D
S
0
TO-264
Max
FREDFET
Power MOS V
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
TO-264
MAX
Package
Faster Switching
Lower Leakage
100% Avalanche Tested
Fast Recovery Body Diode
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