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參數(shù)資料
| 型號(hào)： | APT10026L2LLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-264MAX, 3 PIN |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | APT10026L2LLG |
050-7024
Rev
B
12-2003
APT10026L2LL
Typical Performance Curves
TO-264 MAXTM(L2) Package Outline
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
IC
D.U.T.
APT30DF120
VCE
Figure 20, Inductive Switching Test Circuit
G
VDD
10%
90%
10%
t
r
5%
t
d(on)
Switching Energy
5%
90%
10%
t
f
0
t
d(off)
T
J
= 125°C
Switching Energy
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PDF描述 |
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| APT10026L2LL | 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| APT1002RAN | 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10026RKVR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1000V RDS(ON)26Ohms ID(cont):0.48Amps|MOSFETs |
| APT1002R4AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5.5A I(D) | TO-3 |
| APT1002R4BN | 制造商: 功能描述: 制造商:undefined 功能描述: |
| APT1002R4BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6.5A I(D) | TO-247AD |
| APT1002R4CN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-254ISO |
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