- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51260 > APT10026L2LLG (MICROSEMI POWER PRODUCTS GROUP) 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APT10026L2LLG |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-264MAX, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 103K |
| 代理商： | APT10026L2LLG |
DYNAMIC CHARACTERISTICS
050-7024
Rev
B
12-2003
APT10026L2LL
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
SINGLE PULSE
Z
θJC
,THERMAL
IMPEDANCE
(°C/W)
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -38A)
Reverse Recovery Time (I
S
= -38A, dl
S
/dt = 100A/s)
Reverse Recovery Charge (I
S
= -38A, dl
S
/dt = 100A/s)
Peak Diode Recovery dv/dt 5
UNIT
Amps
Volts
ns
C
V/ns
MIN
TYP
MAX
38
152
1.3
1182
31.9
10
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.14
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 500V
I
D
= 38A @ 25°C
RESISTIVE SWITCHING
V
GS
= 15V
V
DD
= 500V
I
D
= 38A @ 25°C
R
G
= 0.6
INDUCTIVE SWITCHING @ 25°C
V
DD
= 667V, V
GS
= 15V
I
D
= 38A, R
G
= 3
INDUCTIVE SWITCHING @ 125°C
V
DD
= 667V, V
GS
= 15V
I
D
= 38A, R
G
= 3
MIN
TYP
MAX
7114
1268
224
267
34
173
17
8
39
9
1196
713
2014
971
UNIT
pF
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 4.43mH, RG = 25, Peak IL = 38A
5 dv
/dt numbers reflect the limitations of the test circuit rather than the
device itself. I
S ≤
-38A di/dt ≤ 700A/s V
R ≤
1000V
T
J ≤
150
°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT10026L2LL | 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT10026L2LL | 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT1002RAN | 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| APT1002RAN | 6 A, 1000 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
| APT902R4AN | 5.5 A, 900 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT10026RKVR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Volts:1000V RDS(ON)26Ohms ID(cont):0.48Amps|MOSFETs |
| APT1002R4AN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5.5A I(D) | TO-3 |
| APT1002R4BN | 制造商: 功能描述: 制造商:undefined 功能描述: |
| APT1002R4BNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6.5A I(D) | TO-247AD |
| APT1002R4CN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-254ISO |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。