參數(shù)資料
型號: APM3020P
廠商: Anpec Electronics Corporation
英文描述: P-Channel Enhancement Mode MOSFET
中文描述: P溝道增強型MOS管
文件頁數(shù): 5/9頁
文件大?。?/td> 622K
代理商: APM3020P
Copyright
ANPEC Electronics Corp.
Rev. A.1 - July., 2002
APM3020P
www.anpec.com.tw
5
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.01
0.1
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1
10
50
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
-
S
-
-V
SD
-Source-to-Drain Voltage (V )
T
J
=25
°
C
T
J
=150
°
C
Time (sec)
Single Pulse Power
P
Square Wave Pulse Duration (sec)
N
T
Normalized Transient Thermal Transient Impedence, Junction to Ambient
D=0.1
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=50
°
C/W
3. T
JM
-T
A
=P
DM
Z
thJA
SINGLE PULSE
D=0.01
D=0.02
D=0.05
D=0.2
Duty Cycle=0.5
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