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參數(shù)資料
| 型號： | APM3020P |
| 廠商： | Anpec Electronics Corporation |
| 英文描述： | P-Channel Enhancement Mode MOSFET |
| 中文描述： | P溝道增強型MOS管 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 622K |
| 代理商： | APM3020P |
Copyright
ANPEC Electronics Corp.
Rev. A.1 - July., 2002
APM3020P
www.anpec.com.tw
2
Symbol
Parameter
Rating
Unit
T
J
Maximum Junction Temperature
150
oC
T
STG
R
θ
JC
Storage Temperature Range
-55 to 150
oC
Thermal Resistance – Junction to Case
2.5
oC/W
Electrical Characteristics
(T
A
= 25
°
C unless otherwise noted)
Absolute Maximum Ratings
(T
A
= 25
°
C unless otherwise noted)
APM3020P
Typ.
Symbol
Parameter
Test Condition
Min.
Max.
Unit
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage V
GS
=0V , I
DS
=-250A
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
-30
V
V
DS
=-24V , V
GS
=0V
V
DS
=V
GS
, I
DS
=-250
μ
A
V
GS
=
±
20V , V
DS
=0V
V
GS
=-10V , I
DS
=-11A
V
GS
=-5V , I
DS
=-7A
I
SD
=-11A, V
GS
=0V
-1
μA
V
nA
-1
-3
±
100
20
17
R
DS(ON)
a
Resistance
24
30
-1.3
m
Ω
V
SD
a
Diode Forward Voltage
-1.3
V
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
23
10
9
16
22
75
31
3720
580
245
30
V
DS
=-15V , V
GS
=-4.5V,
I
DS
=-4.6A
nC
30
30
120
80
V
DD
=-15V , I
DS
=-6A ,
V
GEN
=-10 V , R
G
=1
R
L
=2.5
ns
V
GS
=0V
V
DS
=-25V
Frequency=1.0MHz
pF
Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width
≤
500
μ
s, duty cycle
≤
2%
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