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參數(shù)資料
| 型號： | AP9985M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強(qiáng)模式 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 93K |
| 代理商： | AP9985M |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low On-Resistance
BV
DSS
R
DS(ON)
I
D
40V
15m
Ω
10A
▼
Fast Switching Speed
▼
Surface Mount Package
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
50
Unit
℃
/W
Rthj-amb
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
200120031
AP9985M
Parameter
Rating
40
± 20
10
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
8
48
2.5
0.02
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Parameter
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S
S
S
G
D
D
D
D
SO-8
G
D
S
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