參數(shù)資料
型號： AP9926TGO
廠商： ADVANCED POWER ELECTRONICS CORP
英文描述： N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： N溝道增強型功率MOSFET
文件頁數(shù)： 1/4頁
文件大?。?/td> 80K
代理商： AP9926TGO
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low on-resistance
BV
DSS
R
DS(ON)
I
D
20V
32m
Ω
4.7A
▼
Capable of 2.5V gate drive
▼
Surface mount package
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
P
D
@T
A
=25
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
125
Unit
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
AP9926TGO
Pb Free Plating Product
Parameter
Rating
20
±12
4.7
3.8
20
1
0.008
-55 to 150
-55 to 150
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Thermal Data
Parameter
200315051
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
S2
S2
G2
D1
S1
S1
G1
TSSOP-8
G2
D2
S2
G1
D1
S1
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參數(shù)描述
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