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參數(shù)資料
| 型號(hào)： | AP9926GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 6 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 95K |
| 代理商： | AP9926GEM |
AP9926GEM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
25
30
35
40
45
2
3
4
5
6
V
GS
(V)
R
D
Ω
)
I
D
=6A
T
C
=25
o
C
0
6
12
18
24
0
0.5
V
DS
, Drain-to-Source Voltage (V)
1
1.5
2
2.5
I
D
T
C
=150
o
C
V
GS
=2.0V
4.5V
4.0V
3.5V
3.0V
2.5V
0.6
0.9
1.2
1.5
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
V
GS
=4.5V
I
D
=6A
0
5
10
15
20
25
0
0.5
V
DS
, Drain-to-Source Voltage (V)
1
1.5
2
2.5
I
D
T
C
=25
o
C
V
GS
=2.0V
4.5V
4.0V
3.5V
3.0V
2.5V
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| AP9926GO | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9926GEO | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GEO-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge,Surface mount package |
| AP9926GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Surface Mount Package |
| AP9926GO | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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