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參數(shù)資料
| 型號(hào)： | AP9922EO |
| 廠(chǎng)商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 103K |
| 代理商： | AP9922EO |
AP9922EO
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
10
20
30
40
50
0
1
1
2
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
T
A
=25
o
C
5.0V
4.5V
3.5V
2.5V
V
G
=1.8V
0
10
20
30
40
50
0
1
1
2
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
5.0V
4.5V
3.5V
2.5V
V
G
=1.8V
T
A
=150
o
C
10
15
20
25
30
35
0
2
4
6
8
10
12
V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=4A
T
A
=25
℃
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=6A
V
G
=4.5V
0
1
2
3
4
5
6
0
0.2
V
SD
, Source-to-Drain Voltage (V)
0.4
0.6
0.8
1
I
S
(
T
j
=25
o
C
T
j
=150
o
C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
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| AP9926M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9922GEO-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application |
| AP9923GEO-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Small & Thin Package, Capable of 1.8V Gate Drive |
| AP9924 | 功能描述:電纜組件 BATTERY MGMT cbl 5 FT RoHS:否 制造商:Molex 產(chǎn)品:Power Assemblies 類(lèi)型:Cable Assembly 連接器端口 A:No Connector 連接器端口 A 管腳計(jì)數(shù):4 連接器端口 B:No Connector 連接器端口 B 管腳計(jì)數(shù): 型式:Male 線(xiàn)規(guī) - 美國(guó)線(xiàn)規(guī)（AWG）:20, 28 長(zhǎng)度:0.305 m 顏色:Black, Red |
| AP9924AGO-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP9924GO | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
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