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參數(shù)資料
| 型號(hào)： | AP9922EO |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 103K |
| 代理商： | AP9922EO |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
ΔB
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.05
-
V/
℃
R
DS(ON)
V
GS
=4.5V, I
D
=6A
-
-
15
m
Ω
V
GS
=2.5V, I
D
=4A
V
DS
=V
GS
, I
D
=1mA
V
DS
=4.5V, I
D
=6A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=±12V
I
D
=6A
V
DS
=16V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3
Ω,
V
GS
=4.5V
R
D
=15
Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
-
-
20
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
0.5
-
1.2
V
Forward Transconductance
-
22
-
S
uA
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
10
Drain-Source Leakage Current (T
j
=70
o
C)
-
-
100
uA
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
-
-
±10
uA
-
25
40
nC
Gate-Source Charge
-
3
-
nC
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
-
9
-
nC
-
11
-
ns
Rise Time
-
12
-
ns
Turn-off Delay Time
-
47
-
ns
Fall Time
-
23
-
ns
Input Capacitance
-
1730
2770
pF
Output Capacitance
-
280
-
pF
Reverse Transfer Capacitance
-
240
-
pF
Gate Resistance
f=1.0MHz
-
2.2
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
SD
t
rr
Q
rr
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=0.84A,V
GS
=0V
I
S
=6A,
V
GS
=0
V
,
dI/dt=100A/μs
-
-
-
1.2
-
V
ns
24
Reverse Recovery Charge
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 208
℃
/W when mounted on Min. copper pad.
AP9922EO
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9922GEO-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 1.8V Gate Drive, Optimal DC/DC Battery Application |
| AP9923GEO-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Small & Thin Package, Capable of 1.8V Gate Drive |
| AP9924 | 功能描述:電纜組件 BATTERY MGMT cbl 5 FT RoHS:否 制造商:Molex 產(chǎn)品:Power Assemblies 類型:Cable Assembly 連接器端口 A:No Connector 連接器端口 A 管腳計(jì)數(shù):4 連接器端口 B:No Connector 連接器端口 B 管腳計(jì)數(shù): 型式:Male 線規(guī) - 美國(guó)線規(guī)（AWG）:20, 28 長(zhǎng)度:0.305 m 顏色:Black, Red |
| AP9924AGO-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
| AP9924GO | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low on-resistance, Capable of 2.5V gate drive |
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