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參數(shù)資料
| 型號(hào)： | AP9918J |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 93K |
| 代理商： | AP9918J |
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9918H/J
0
10
20
30
40
50
60
0
50
100
150
T
c
, Case Temperature (
o
C)
P
D
(
1
10
100
1000
1
10
100
V
DS
(V)
I
D
(
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
10us
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
0
10
20
30
40
50
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
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