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參數(shù)資料
| 型號(hào)： | AP9575GI |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 16 A, 60 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT PACKAGE, TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 70K |
| 代理商： | AP9575GI |
AP9575GI
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
V
GS
=0V, I
D
=-250uA
-60
-
-
V
R
DS(ON)
V
GS
=-10V, I
D
=-10A
-
-
70
m
Ω
V
GS
=-4.5V, I
D
=-8A
-
-
90
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-10A
V
DS
=-60V, V
GS
=0V
V
DS
=-48V, V
GS
=0V
V
GS
= ±20V
I
D
=-10A
V
DS
=-50V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-10A
R
G
=3.3
Ω,
V
GS
=-10V
R
D
=3
Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
-1
-
-3
V
Forward Transconductance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14
-
-
-
21
5
11
10
18
24
42
1760
160
130
5
-
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Drain-Source Leakage Current (T
j
=25
o
C)
-10
-25
±100
34
-
-
-
-
-
-
2800
-
-
8
Drain-Source Leakage Current (T
j
=150
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
46
100
Max.
-1.3
-
-
Units
V
ns
nC
Forward On Voltage
2
Reverse Recovery Time
2
I
S
=-10A, V
GS
=0V
I
S
=-10A, V
GS
=0V,
dI/dt=-100A/μs
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
2/4
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AP9575GI_09 | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP9575GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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| AP9575GJ-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9575GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic |
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