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參數(shù)資料
| 型號(hào)： | AP9565GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 89K |
| 代理商： | AP9565GEM |
AP9565GEM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. On-Resistance vs.
Reverse Diode
Drain Current
3/4
0
10
20
30
02468
10
-V DS , Drain-to-Source Voltage (V)
-I
D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =150
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0V
20
40
60
80
100
120
24
68
10
-V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =-4A
T A =25
o C
0.6
1.0
1.4
1.8
25
50
75
100
125
150
T j , Junction Temperature (
o C)
N
ormalize
dR
DS(ON)
I D =-6A
V G = -10V
0
10
20
30
02468
-V DS , Drain-to-Source Voltage (V)
-I
D
,Dr
ai
n
C
u
rr
ent
(A
)
T A =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
-I
S(A
)
T j =25
o C
T j =150
o C
20.0
30.0
40.0
50.0
60.0
010
20
30
40
-I D , Drain Current (A)
R
DS(ON)
(m
)
V GS = -4.5V
V GS = -10V
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