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參數(shù)資料
| 型號： | AP9565GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 40 V, 0.038 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 89K |
| 代理商： | AP9565GEM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
-0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-6A
-
38
mΩ
VGS=-4.5V, ID=-4A
-
48
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.8
-
-2.5
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
6
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-40V, VGS=0V
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-32V, VGS=0V
-
-25
uA
IGSS
Gate-Source Leakage
VGS=± 16V
-
±30
uA
Qg
Total Gate Charge
2
ID=-6A
-
12.8
20
nC
Qgs
Gate-Source Charge
VDS=-30V
-
2.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6.3
-
nC
td(on)
Turn-on Delay Time
2
VDS=-20V
-
8.9
-
ns
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
26.9
-
ns
tf
Fall Time
RD=20Ω
-
36.9
-
ns
Ciss
Input Capacitance
VGS=0V
-
980
1570
pF
Coss
Output Capacitance
VDS=-25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
9
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=-1.9A, VGS=0V
-
-1.3
V
t
rr
Reverse Recovery Time
IS=-6A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
19
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
2/4
AP9565GEM
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