參數(shù)資料
型號: AP9475M
廠商: ADVANCED POWER ELECTRONICS CORP
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: N溝道增強(qiáng)型功率MOSFET
文件頁數(shù): 4/4頁
文件大小: 114K
代理商: AP9475M
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP9475M
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
14
0
10
20
30
40
50
Q
G
, Total Gate Charge (nC)
V
G
V
DS
=30V
V
DS
=38V
V
DS
=48V
I
D
=6A
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 125
/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(
1ms
10ms
100ms
1s
DC
T
A
=25
o
C
Single Pulse
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