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參數(shù)資料
| 型號： | AP9475M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強(qiáng)型功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 114K |
| 代理商： | AP9475M |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
60
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.073
-
V/
℃
R
DS(ON)
V
GS
=10V, I
D
=6A
-
-
40
m
Ω
V
GS
=4.5V, I
D
=4A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=6A
V
DS
=60V, V
GS
=0V
V
DS
=48V, V
GS
=0V
V
GS
=±25V
I
D
=6A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=1A
R
G
=3.3
Ω
,
V
GS
=10V
R
D
=30
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
-
50
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
1
-
3
V
Forward Transconductance
-
10
-
S
uA
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
1
Drain-Source Leakage Current (T
j
=70
o
C)
-
-
25
uA
I
GSS
Gate-Source Leakage
Total Gate Charge
2
-
-
±100
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
-
19
30
nC
Gate-Source Charge
-
5
-
nC
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
-
10
-
nC
-
11
-
ns
Rise Time
-
6
-
ns
Turn-off Delay Time
-
35
-
ns
Fall Time
-
10
-
ns
Input Capacitance
-
1670
2670
pF
Output Capacitance
-
160
-
pF
Reverse Transfer Capacitance
-
116
-
pF
Gate Resistance
f=1.0MHz
-
1.58
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
SD
t
rr
Q
rr
Forward On Voltage
2
Reverse Recovery Time
I
S
=2A, V
GS
=0V
I
S
=6A,
V
GS
=0
V
,
dI/dt=100A/μs
-
-
-
1.2
-
V
ns
34
Reverse Recovery Charge
-
50
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 125
℃
/W when mounted on min. copper pad.
AP9475M
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