參數(shù)資料
型號(hào)： AP9412AGH
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 68 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 165K
代理商： AP9412AGH
APTM60A23UT1G
APT
M
60A23UT
1
G
–
Rev
0
Decem
b
er
,2007
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
250
IDSS
Zero Gate Voltage Drain Current
VDS = 600V
VGS = 0V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 17A
230
276
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5316
Coss
Output Capacitance
610
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
56
pF
Qg
Total gate Charge
165
Qgs
Gate – Source Charge
36
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 17A
70
nC
Td(on)
Turn-on Delay Time
37
Tr
Rise Time
43
Td(off)
Turn-off Delay Time
115
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 400V
ID = 17A
RG = 4.7Ω
34
ns
Source - Drain diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tc = 25°C
20
IS
Continuous Source current
(Body diode)
Tc = 80°C
15
A
VSD
Diode Forward Voltage
VGS = 0V, IS = - 17A
1
V
dv/dt
Peak Diode Recovery
30
V/ns
Tj = 25°C
200
trr
Reverse Recovery Time
Tj = 125°C
370
ns
Tj = 25°C
0.76
Qrr
Reverse Recovery Charge
IS = - 17A
VR = 100V
diS/dt = 100A/s
Tj = 125°C
1.91
C
dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 17A
di/dt
≤ 1000A/s
VDD ≤ 400V
Tj ≤ 125°C
相關(guān)PDF資料
PDF描述
AP9412AGI 68 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP9412BGM 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9414GM 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9416GM 30 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET
AP9418GM 35 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP9412AGI 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Single Drive Requirement, Full Isolation Package
AP9412AGM 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Ultra_Low On-resistance
AP9412AGM-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Ultra_Low On-resistance
AP9412AGM-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 30V 6MOHM SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 6MOHM, SO-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 30V, 6MOHM, SO-8, Transistor Polarity:N Channel, Continuous Drain Current Id:16A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.006ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:2.5W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 30V, 6MOHM, SO-8, Transistor Polarity:N Channel, Continuous Drain C
AP9412AGP 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement
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