參數(shù)資料
型號: AP9412BGM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數(shù): 1/4頁
文件大?。?/td> 97K
代理商: AP9412BGM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
6mΩ
▼ Fast Switching Characteristic
ID
18A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Pulsed Drain Current
1
50
RoHS-compliant Product
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Storage Temperature Range
Continuous Drain Current
3
15
200807211
1
AP9412BGM
Rating
30
+20
18
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
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