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參數(shù)資料
| 型號(hào)： | AP9408AGP |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 53 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | ROHS COMPLIANT, TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大小： | 145K |
| 代理商： | AP9408AGP |
APTM60H23FT1G
APT
M
60H23FT
1G
–
Rev
0
Janu
ar
y,
2010
www.microsemi.com
4 – 5
Typical Performance Curve
Low Voltage Output Characteristics
TJ=25°C
TJ=125°C
0
12.5
25
37.5
50
62.5
75
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VGS=10V
Low Voltage Output Characteristics
6V
5.5V
0
10
20
30
40
50
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(A)
TJ=125°C
VGS=7 &8V
Normalized RDSon vs. Temperature
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
on
,
D
rai
n
to
S
o
u
rce
ON
resi
stan
c
e
VGS=10V
ID=17A
Transfert Characteristics
TJ=25°C
TJ=125°C
0
10
20
30
40
50
01
2345
67
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5
duty cycle
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0
50
100
150
200
VDS, Drain to Source Voltage (V)
C
,C
a
pa
c
it
a
nc
e
(
pF)
Capacitance vs Drain to Source Voltage
Gate Charge vs Gate to Source
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
0
25
50
75
100
125
150
175
Gate Charge (nC)
V
GS
,G
a
te
t
o
Sour
c
e
V
o
lt
a
g
e
ID=17A
TJ=25°C
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