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參數資料
| 型號： | AP503 |
| 元件分類： | 放大器 |
| 英文描述： | 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT, FM-6 |
| 文件頁數： | 4/5頁 |
| 文件大?。?/td> | 321K |
| 代理商： | AP503 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 4 of 5 February 2006
AP503
DCS-band 4W HBT Amplifier Module
Product Information
The Communications Edge
TM
MTTF Calculation
The MTTF of the AP503 can be calculated by first
determining how much power is being dissipated by the
amplifier module. Because the device’s intended application
is to be a power amplifier pre-driver or final stage output
amplifier, the output RF power of the amplifier will help
lower the overall power dissipation.
In addition, the
amplifier can be biased with different quiescent currents, so
the calculation of the MTTF is custom to each application.
The power dissipation of the device can be calculated with
the following equation:
Pdiss = Vcc * Icc – (Output RF Power – Input RF Power),
Vcc = Operating supply voltage = 12V
Icc = Operating current
{The RF power is converted to Watts}
While the maximum recommended case temperature on the
datasheet is listed at 85 C, it is suggested that customers
maintain an MTTF above 1 million hours.
This would
convert to a derating curve for maximum case temperature vs.
power dissipation as shown in the plot below.
Maximum Recommended Case Temperature vs. Power Dissipation
to maintain 1 million hours MTTF
50
60
70
80
90
4567
89
10
11
12
Power Dissipation (Watts)
Max
im
u
m
Case
T
em
p
er
a
tur
e(
°C)
To calculate the MTTF for the module, the junction
temperature needs to be determined. This can be easily
calculated with the module’s power dissipation, the thermal
resistance value, and the case temperature of operation:
Tj = Pdiss * Rth + Tcase
Tj = Junction temperature
Pdiss = Power dissipation (calculated from above)
Rth = Thermal resistance = 9 C/W
Tcase = Case temperature of module’s heat sink
From a numerical standpoint, the MTTF can be calculated
using the Arrhenius equation:
MTTF = A* e
(Ea/k/Tj)
A = Pre-exponential Factor = 6.087 x 10
-11 hours
Ea = Activation Energy = 1.39 eV
k = Boltzmann’s Constant = 8.617 x 10
-5 eV/ K
Tj = Junction Temperature (K) = Tj (C) + 273
A graphical view of the MTTF can be shown in the plot
below.
MTTF vs. Junction Temperature
1.E+05
1.E+06
1.E+07
130
140
150
160
170
180
Junction Temperature (°C)
MTT
F
(h
our
s)
相關PDF資料 |
PDF描述 |
|---|---|
| AP513 | 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| AP560 | 10 MHz - 500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AP640R2-00 | 26000 MHz - 40000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.1 dB INSERTION LOSS |
| AP640R5-00 | 24000 MHz - 40000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 2.4 dB INSERTION LOSS |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AP503-PCB | 功能描述:射頻開發(fā)工具 1.80-1.88GHz Brd 12V 4W 3-stage RoHS:否 制造商:Taiyo Yuden 產品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AP504 | 功能描述:射頻放大器 1705-790MHz 31.5dB Gain RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| AP504-PCB | 功能描述:射頻開發(fā)工具 1.71-1.79GHz Brd 12V 4W 3-stage RoHS:否 制造商:Taiyo Yuden 產品:Wireless Modules 類型:Wireless Audio 工具用于評估:WYSAAVDX7 頻率: 工作電源電壓:3.4 V to 5.5 V |
| AP50B10 | 制造商:LEM Holdings SSA 功能描述:AP50B10 split core current transducer |
| AP50-B10 | 制造商:LEM 制造商全稱:LEM 功能描述:AC Current transducer AP-B10 |
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