參數(shù)資料
型號(hào): AP503
元件分類: 放大器
英文描述: 1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝: ROHS COMPLIANT, FM-6
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 321K
代理商: AP503
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 2 of 5 February 2006
AP503
DCS-band 4W HBT Amplifier Module
Product Information
The Communications Edge
TM
Performance Graphs – Class AB Configuration (AP503-PCB)
The AP503-PCB and AP503 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for
the amplifier is set at 0 in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
Notes:
1. Please note that for reliable operation, the evaluation board will have
to be mounted to a much larger heat sink during operation and in
laboratory environments to dissipate the power consumed by the
device.
The use of a convection fan is also recommended in
laboratory environments. Details of the mounting holes used in the
WJ heatsink are given on the last page of this datasheet.
2. The area around the module underneath the PCB should not contain
any soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on
sequencing should be followed:
1. Connect RF In and Out
2. Connect the voltages and ground pins as shown in the circuit.
3. Apply the RF signal
4. Power down with the reverse sequence
Gain
+25 °C, 12Vcc, Icq=850mA
28
29
30
31
32
33
1800
1820
1840
1860
1880
1900
Frequency (MHz)
Ga
in
(dB
)
Return Loss
+25 °C, Vcc=12V, Icq=850mA
-25
-20
-15
-10
-5
0
1800
1820
1840
1860
1880
1900
Frequency (MHz)
Ma
g
ni
tu
d
e
(dB
)
S11
S22
Gain vs. Temp
1855 MHz, Vcc=12V, Icq=850mA
26
28
30
32
34
36
-40
-20
0
20406080
Temperature (°C)
Ga
in
(dB
)
ACPR vs. Output Power vs. Temp
CDMA2000 SR1, 7FA , fc=1855 MHz,
Δf=±885 kHz, Vcc=12V, Icq=850mA
-70
-65
-60
-55
-50
18
20
22
24
26
28
Total Output Power (dBm)
AC
P
R
(dB
c)
-40 °C
+25 °C
+85 °C
ACPR vs. Output Power vs. Temp
CDMA2000 SR1, 7FA , fc=1855 MHz,
Δf=±1.98 MHz, Vcc=12V, Icq=850mA
-70
-65
-60
-55
-50
18
20
22
24
26
28
Total Output Power (dBm)
AC
P
R
(dB
c)
-40 °C
+25 °C
+85 °C
ACPR vs. Frequency vs. Temp
CDMA2000 SR1, 7FA ,
Δf=±885 kHz, 25 dBm Pout, Vcc=12V, Icq=850mA
-70
-65
-60
-55
-50
1840
1850
1860
1870
Frequency (MHz)
AC
P
R
(dB
c)
-40 °C
+25 °C
+85 °C
DNP
0
10
μF
.01
μF
.01
μF
100pF
+
12V
+1
2
V
GND
+5
V
6
5
4
2
3
1
RF IN
RF OUT
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