參數(shù)資料
型號： AP502
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 放大器
英文描述： 2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝： ROHS COMPLIANT PACKAGE-6
文件頁數(shù)： 3/5頁
文件大?。?/td> 852K
代理商： AP502
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 3 of 5 July 2008
AP502
UMTS-band 4W HBT Amplifier Module
Product Information
Performance Graphs – Class B Configuration
The AP502 can be adjusted to operate at lower current biasing levels by modifying the R7 resistor for improved efficiency
performance. The configuration shown on this page has the AP502 operating with Icq = 250 mA (Icc = 400 mA @ 27 dBm).
Output L-C matching components have been added externally on the circuit to optimize the amplifier for ACPR performance at
this biasing configuration.
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Narrowband S-Parameters
+25 °C, Icq=275mA
26
27
28
29
30
31
2110
2130
2150
2170
Frequency (MHz)
S21
(
d
B)
-20
-15
-10
-5
0
5
S11
,S2
2
(dB)
S21
S11
S22
Wideband S-Parameters
+25 °C, Icq=275mA
-40
-20
0
20
40
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Ma
gnitude
(dB)
S21
S11
S22
Gain / Output Power vs. Input Power
2140 MHz, +25 °C, Icq=275mA
28
30
32
34
36
38
-2
02
468
10
Input Power (dBm)
Po
ut
(d
Bm)
25
26
27
28
29
30
Ga
in
(d
B)
Pout
Gain
ACLR vs. Channel Power
+25 °C, 3GPP W-CDMA, Test Model 1+32 DPCH, 1960 MHz, Icq=250mA
-70
-60
-50
-40
20
21
22
23
24
25
26
27
28
Output Channel Power (dBm)
AC
LR
(d
B
c
)
±5 MHz
±10 MHz
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 °C, Icq=275mA
-60
-50
-40
-30
-20
20
22
24
26
28
30
32
Output Power per tone (dBm)
IMD
(dBc)
20
30
40
50
60
OI
P
3
(d
B
m
)
IMD3L
IMD3U
IMD5
OIP3
PAE / Icc vs. Output Power
2140 MHz, +25 °C, Icq=275mA
300
400
500
600
700
800
22
24
26
28
30
32
34
Output Power (dBm)
Ic
c
(mA
)
0
5
10
15
20
25
PAE
(%)
Icc
PAE
DNP
0
730
0
10
μF
.01
μF
.01
μF
100pF
+
12V
+
12V
GND
+5
V
6
5
4
2
3
1
RF IN
RF OUT
2.2nH
DNP
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