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參數(shù)資料
| 型號(hào)： | AP502 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 放大器 |
| 英文描述： | 2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 852K |
| 代理商： | AP502 |
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 2 of 5 July 2008
AP502
UMTS-band 4W HBT Amplifier Module
Product Information
Performance Graphs – Class AB Configuration (AP502-PCB)
The AP502-PCB and AP502 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for
the amplifier is set at 0 in this configuration. Increasing that value will decrease the quiescent and operating current of the
amplifier module, as described on the next page.
Notes:
1. Please note that for reliable operation, the evaluation board will have to
be mounted to a much larger heat sink during operation and in laboratory
environments to dissipate the power consumed by the device. The use of
a convection fan is also recommended in laboratory environments.
Details of the mounting holes used in the WJ heatsink are given on the
last page of this datasheet.
2. The area around the module underneath the PCB should not contain any
soldermask in order to maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing
should be followed:
a. Connect RF In and Out
b. Connect the voltages and ground pins as shown in the circuit.
c. Apply the RF signal
d. Power down with the reverse sequence
Narrowband S-Parameters
+25 °C, Icq=850mA
28
29
30
31
32
33
2110
2130
2150
2170
Frequency (MHz)
S
21
(dB)
-20
-15
-10
-5
0
5
S1
1,
S
2
(
d
B)
S21
S11
S22
Wideband S-Parameters
+25 °C, Icq=850mA
-40
-20
0
20
40
0
500
1000
1500
2000
2500
3000
Frequency (MHz)
Ma
gnitude
(dB)
S21
S11
S22
Gain / Output Power vs. Input Power
2140 MHz, +25 °C, Icq = 850mA
28
30
32
34
36
38
-6
-4
-2
0246
Input Power (dBm)
Po
ut
(d
Bm)
30
30.5
31
31.5
32
32.5
Ga
in
(d
B)
Pout
Gain
ACLR vs. Channel Power
3GPP W-CDMA, 1FA, Test Model 1+32 DPCH, ±5 MHz offset
2140 MHz, Icq=850mA
-60
-55
-50
-45
-40
18
20
22
24
26
28
Output Channel Power (dBm)
ACL
R
(dB
c
)
-40 C
+25 C
+85 C
IMD3, IMD5, OIP3 vs. Ouptut Power
2140 MHz, +25 °C, Icq = 850mA
-80
-70
-60
-50
-40
20
22
24
26
28
30
32
Output Power per tone (dBm)
IMD
(dBc)
20
30
40
50
60
OI
P
3
(d
B
m
)
IMD3L
IMD3U
IMD5
OIP3
PAE / Icc vs. Output Power
2140 MHz, +25 °C, Icq = 850mA
750
800
850
900
950
1000
22
24
26
28
30
32
34
Output Power (dBm)
Ic
c
(mA
)
0
5
10
15
20
25
PAE
(%)
Icc
PAE
DNP
0
10
μF
.01
μF
.01
μF
100pF
+
12V
+1
2
V
GND
+5
V
6
5
4
2
3
1
RF IN
RF OUT
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