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參數(shù)資料
| 型號： | AP4800GYT-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 11.5 A, 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 3 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 95K |
| 代理商： | AP4800GYT-HF |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP4800GYT-HF
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
04
8
12
16
20
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =10 A
V DS =15V
0
200
400
600
800
1000
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=85 ℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
td(on) tr
td(off) tf
VDS
VGS
10%
90%
Operation in this area
limited by RDS(ON)
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