參數(shù)資料
型號(hào): AP4924GM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 6 A, 20 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 102K
代理商: AP4924GM
Advanced Power
Dual N-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
▼ Simple Drive Requirement
BVDSS
20V
▼ Low On-resistance
RDS(ON)
35mΩ
▼ Fast Switching
ID
6A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TA=25℃
Continuous Drain Current
3
A
ID@TA=70℃
Continuous Drain Current
3
A
IDM
Pulsed Drain Current
1
A
PD@TA=25℃
Total Power Dissipation
W
TSTG
Storage Temperature Range
TJ
Operating Junction Temperature Range
Symbol
Value
Unit
Rthj-amb
Maximum Thermal Resistance, Junction-ambient
3
62.5
/W
Data and specifications subject to change without notice
Parameter
1
200904031
AP4924GM
Thermal Data
20
-55 to 150
Rating
2
RoHS-compliant Product
Parameter
-55 to 150
+12
6
4.8
35
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
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