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參數(shù)資料
| 型號： | AP4412GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 7 A, 25 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 77K |
| 代理商： | AP4412GM |
AP4412GM
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5/6
0
1
2
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
G
(
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
Q
G
, Total Gate Charge (nC)
V
G
I
D
=7A
V
DS
=16V
10
100
1000
1
5
9
13
V
DS
(V)
17
21
25
29
C
f=1.0MHz
Ciss
Coss
Crss
0.1
1
10
100
0.1
0.3
0.5
0.7
V
SD
(V)
0.9
1.1
1.3
1.5
I
S
(
Tj=25
o
C
Tj=150
o
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4412M | N-CHANNEL ENHANCEMENT MODE |
| AP4413M | P-CHANNEL ENHANCEMENT MODE |
| AP4415GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4412M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP4413GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4413M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4415GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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