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參數(shù)資料
| 型號(hào)： | AP4412GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 7 A, 25 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | AP4412GM |
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
25
-
-
V
ΔB
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.03
-
V/
℃
R
DS(ON)
V
GS
=10V, I
D
=7A
-
-
33
m
Ω
V
GS
=4.5V, I
D
=3.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
V
DS
=25V, V
GS
=0V
V
DS
=20V ,V
GS
=0V
V
GS
=±20V
I
D
=7A
V
DS
=16V
V
GS
=5V
V
DS
=16V
I
D
=7A
R
G
=3.3
Ω,
V
GS
=10V
R
D
=2.3
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
-
-
60
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
1
-
-
3
-
V
S
uA
12
Drain-Source Leakage Current (T
j
=25
o
C)
-
-
-
-
-
-
-
-
-
-
-
-
7
1
25
±100
-
-
-
-
-
-
Drain-Source Leakage Current (T
j
=70
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
uA
nA
nC
nC
nC
ns
ns
ns
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
1.5
5
7
22
14.5
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-
-
-
-
6
-
-
-
-
ns
218
155
63
pF
pF
pF
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Test Conditions
Min.
-
-
Typ.
-
-
Max.
2.08
1.2
Units
A
Continuous Source Current ( Body Diode )
Forward On Voltage
2
V
D
=V
G
=0V , V
S
=1.2V
T
j
=25
℃
, I
S
=2.3A, V
GS
=0V
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 125
℃
/W when mounted on Min. copper pad.
2/6
AP4412GM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4412M | N-CHANNEL ENHANCEMENT MODE |
| AP4413M | P-CHANNEL ENHANCEMENT MODE |
| AP4415GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GJ | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4412M | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP4413GM | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4413M | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE |
| AP4415GH | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4415GJ | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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